Conference Information
Scope of the symposium
The Japan Society for the Promotion of Science (JSPS) and its 145th Committee on Processing and Characterization of Crystals
will hold The Seventh International Symposium on Advanced Science and Technology of Silicon at Sheraton Kona Resort & Spa at Keauhou Bay,
Hawaii, on November 21-25, 2016.
The first, second, third, fourth, fifth and sixth symposia were held at the same location in November of 1991, 1996, 2000, 2004, 2008, and 2012 respectively.
The Symposium provides a valuable opportunity for scientists and engineers engaged in fundamental and applied research on silicon and related materials
to discuss basic problems and new possibilities in this field. The Symposium will cover broad aspects of physics and recent technologies using silicon related materials
and devices. The program will be arranged to provide ample time for discussion and communication among participants. Accordingly, the number of oral presentations consisting
mainly of invited talks will be limited. Contributions to the program in the form of poster presentation will be welcome. The proceedings of the Symposium will be distributed
at the Symposium. Given the nature of Symposium, the number of attendees will be limited to approximately 100. Further information can be obtained from the Symposium homepage
(http://gakushin145.kir.jp/hawaii2016). Those interested in
presenting a paper should submit an abstract of not more than 300 words to the Program Chair by August 12, 2016. The authors will
be notified by August 20, whether or not the paper is accepted for the Symposium.
Topics
Crystal growth and wafer technology
- Point-defect-controlled wafer, Epi wafer, Annealed wafer
- SOI, GOI, Strained Si wafer
- Advanced wafer processing
Defects and impurities
- Point defects, Diffusion, Gettering
- Strain and stress
- Defect engineering for emerging materials
Photovoltaic Si
- Impurities and defects in solar cell materials
- Crystal growth and advanced processing
- Materials characterization techniques
Group IV semiconductor-based device technology
- Gate-stack materials and processes
- New materials for advanced CMOS devices
- Si power devices
Advanced characterization technology
- Electron microscopy
- X-ray diffraction
- FTIR, PL, Other spectroscopic and optical imaging techniques
SiC, Nitride semiconductors and other wide-bandgap materials
- Bulk and epitaxial growth, Processing
- Defect characterization
- Power, high-frequency, and optical devices including LED and LD