Prof. Michael Dudley, Stony Brook University
Contributions of Synchrotron X-ray Topography to the Understanding of Dislocation Configurations in SiC substrates and Epilayers
Dr. Gudrun Kissinger, IHP- Leibniz Institute for High Performance Microelectronics
Precipitation of suboxides in silicon and its impact on gettering and carrier recombination
Prof. Daniel Macdonald, The Australian National University
Gettering and Hydrogenation of Defects and Impurities in High Efficiency Silicon Solar Cells
Dr. Nathalie Mangelinck-Noël, Institute of Materials Microelectronics and Nanosciences of Provence, CNRS
In situ and real-time investigation of the solidification of silicon by X-ray imaging
Prof. Matteo Meneghini, University of Padova
III-N optical devices: physical processes limiting efficiency and reliability
Prof. John Murphy, University of Warwick
Mitigation of bulk and surface recombination losses in silicon photovoltaic materials
Dr. John Palmour, Wolfspeed
Evolution of SiC material and device technologies (TBD)
Prof. Deren YANG, State Key Lab of Silicon Materials, Zhejiang University
Defect in cast-mono silicon
Prof. Kentaro KANEKO, Ritsumeikan Univ.
Ga2O3 and beyond Ga2O3 material of GeO2 for power device
Dr. Akira MINAMIKAWA, OMDIA
Global electronics and semiconductor trend ~ Carbon neutral and DX change the trend~
Dr. Takahiro MORI, AIST
Toward Silicon Quantum Computers: Challenges in Devices, Integration, and Circuits
Dr. Yuji NAGASHIMA, Shibaura Mechatoronics
Silicon wafer cleaning technology
Dr. Takeshi OHSHIMA, QST
Creation of Spin Defects in Silicon Carbide by Particle Irradiation for Quantum Applications
Dr. Kohei SASAKI, Novel Crystal
β-Ga2O3 crystal growth and device processing
Dr. Nobuhiko SATO, Canon
Characteristics and its control of white spot defects on Image Sensors
Dr. Haruo SUDO, GWJ
Formation Behavior of Oxygen Precipitates in Silicon Wafers Subjected to Ultra-High-Temperature Rapid Thermal Process
Prof. Michio TAJIMA, JSNM
Standardization of Photoluminescence and Infrared Absorption Methods for Quantifying Low-Level Carbon in Si
Prof. Toru UJIHARA, Nagoya Univ.
Large diameter SiC solution growth assisted by AI technology
Prof. Ryo YOKOGAWA, Meiji Univ.
Phonon properties of bulk silicon-germanium analyzed by inelastic X-ray scattering
Prof. Tatsuya YOKOI, Nagoya Univ.
Artificial-neural-network potential for accurately predicting atomic structure and physical properties of lattice defects in semiconductors
